InN thin films show transient Pauli blocking for broadband ultrafast optical switching

InN thin films show transient Pauli blocking for broadband ultrafast optical switching

Recent decades have witnessed rapid advancements in high-intensity laser technology. The combination of laser irradiation and novel materials is opening exciting avenues for the design of functional materials and devices. Semiconductors are ideal platforms for generating laser-driven functionalities because they can exhibit novel features such as ultrafast optical transparency. This effect arises from electronic occupation redistribution driven by ultrafast excitation, which manifests as a pheno...

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