China crafts working 3nm gate-all-around transistors without EUV — stacked nanosheets target 3nm without EUV, but full node remains distant

The Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) has developed an experimental process flow for building stacked-nanosheet gate-all-around (GAA) transistors using immersion DUV lithography and demonstrated functional devices. The flow is intended for eventual use with 3nm-class and smaller process technologies by Chinese chipmakers that do not have access to EUV scanners, reports DigiTimes.While IMECAS has demonstrated functional GAA devices, it has not disclosed the critical geometrical parameters that would allow comparisons to 3nm-class transistors from other chipmakers. Furthermore, the experimental process flow for building transistors is not even a defined process flow for building research chips, much less a complete 3nm-class manufacturing process.Get Tom's Hardware's best news and in-depth reviews, straight to your inbox.